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Volumn 30, Issue 6, 1983, Pages 4486-4492

Charge collection in test structures

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0020904494     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333159     Document Type: Article
Times cited : (26)

References (18)
  • 1
    • 0020296981 scopus 로고
    • Charge Collection Measurements for Energetic Ions in Silicon
    • December
    • A.B. Campbell and A.R. Knudson, “Charge Collection Measurements for Energetic Ions in Silicon,” IEEE Trans. Nucl. Sci., NS-29, p. 2067, December 1982. NS-29
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29 , pp. 2067
    • Campbell, A.B.1    Knudson, A.R.2
  • 2
    • 0019702346 scopus 로고
    • Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits
    • December
    • A.R. Knudson and A.B. Campbell, “Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits,” IEEE Trans. Nucl. Sci., NS-28, p. 4017, December 1981. NS-28
    • (1981) IEEE Trans. Nucl. Sci. , vol.NS-28 , pp. 4017
    • Knudson, A.R.1    Campbell, A.B.2
  • 3
    • 0019755504 scopus 로고
    • Investigation of Soft Upsets in MOS Memories with a Microbeam
    • December
    • A.B. Campbell, A.R. Knudson and E.A. Wolicki, “Investigation of Soft Upsets in MOS Memories with a Microbeam,” Nucl. Instrum. Methods, 191, p. 427, December 1981.
    • (1981) Nucl. Instrum Methods 191 , pp. 427
    • Campbell, A.B.1    Knudson, A.R.2    Wolicki, E.A.3
  • 7
    • 0001242477 scopus 로고
    • Electron Multiplication in Silicon and Germanium
    • Sept
    • K.G. McKa y and K.B. McAfee, “Electron Multiplication in Silicon and Germanium,” Phys. Rev., 91, P. 1079, Sept. 1953.
    • (1953) Phys. Rev. 91 , pp. 1079
    • McKay, K.G.1    McAfee, K.B.2
  • 8
    • 0005175370 scopus 로고
    • Internal Pulse Amplification in High Field, Silicon Radiation Detection Junctions
    • February
    • G.C. Huth, J.B. Trice, J.A. Shannon, and R.A. McKinne y , “Internal Pulse Amplification in High Field, Silicon Radiation Detection Junctions,” IEEE Trans. Nucl. Sci., February 1965 issue, p. 275.
    • (1965) IEEE Trans. Nucl. Sci , pp. 275
    • Huth, G.C.1    Trice, J.B.2    Shannon, J.A.3    McKinney, R.A.4
  • 9
    • 0020952139 scopus 로고
    • Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon
    • Dec
    • T.R. Oldham and F.B. McLean, “Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon,” to be published, IEEE Trans. Nucl. Sci., Dec 1983.
    • (1983) IEEE Trans. Nucl. Sci
    • Oldham, T.R.1    McLean, F.B.2
  • 10
    • 0018547168 scopus 로고    scopus 로고
    • Modeling Diffusion and Collection of Charge from Ionizing Radiation in Silicon Devices
    • November
    • S. Kirkpatrick, “Modeling Diffusion and Collection of Charge from Ionizing Radiation in Silicon Devices,” IEEE Trans. Electron Devices, ED-26, p. 1742, November 1979.
    • IEEE Trans Electron Devices , vol.ED-26 , pp. 1742
    • Kirkpatrick, S.1
  • 13
    • 0019551234 scopus 로고
    • A Field-funneling Effect on the Collection of Alpha-Particle Generated Carriers in Silicon Devices
    • April
    • C.M. Hsieh, P.C. Murley, and R.R. O’Brien, “A Field-funneling Effect on the Collection of Alpha-Particle Generated Carriers in Silicon Devices,” IEEE Elect. Device Lett., EDL-2, p. 103, April 1981.
    • (1981) IEEE Elect. Device Lett. , vol.EDL-2 , pp. 103
    • Hsieh, C.M.1    Murley, P.C.2    O'Brien, R.R.3
  • 15
    • 0020091827 scopus 로고
    • Alpha-Particle-Induced Field and Enhanced Collection of Carriers
    • February
    • C. Hu, “Alpha-Particle-Induced Field and Enhanced Collection of Carriers,” IEEE Elect. Device Lett., EDL-3, p. 31, February 1982.
    • (1982) IEEE Elect. Device Lett. , vol.EDL-3 , pp. 31
    • Hu, C.1
  • 16
    • 0020312672 scopus 로고    scopus 로고
    • Charge Funneling in n- and p-type Si Substrates
    • December
    • F.B. McLean and T.R. Oldham, “Charge Funneling in n- and p-type Si Substrates,” IEEE Trans. Nucl. Sci., NS-29, p. 2018, December 1982.
    • (2018) IEEE Trans. Nucl. Sci. , vol.NS-29
    • McLean, F.B.1    Oldham, T.R.2
  • 17
    • 0020298427 scopus 로고
    • Collection of Charge on Junction Nodes from Ion Tracks
    • December
    • G.C. Messenger, “Collection of Charge on Junction Nodes from Ion Tracks,” IEEE Trans. Nucl. Sci., NS-29, p. 2024, December 1982.
    • (1982) IEEE Trans. Nucl. Sci. , vol.NS-29
    • Messenger, G.C.1
  • 18
    • 0019071738 scopus 로고
    • Monte Carlo Modeling of the Transport of Ionizing Radiation Creater Carriers in Integrated Circuits
    • October
    • G.A. Sai-Halasz and M.R. Wordeman, “Monte Carlo Modeling of the Transport of Ionizing Radiation Creater Carriers in Integrated Circuits,” IEEE Elect. Device Lett., EDL-1, p. 211, October 1980.
    • (1980) IEEE Elect. Device Lett. , vol.EDL-1 , pp. 211
    • Sai-Halasz, G.A.1    Wordeman, M.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.