Comparison of 2d memory SEU transport simulation with experiments

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4145-4149

  Fu, J S ^a   Weaver, H T ^a   Koga, R ^b   Kolasinski, W A ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939050038     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334083     Document Type: Article

References (7)

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2. H. Momose, T. Wada, I. Kamohara, M. Isobe, J. Matsunage and H. Nozawa, “A P-Type Buried Layer for Protection Against Soft Errors in High Density CMOS Static RAMs,” IEDM Tech. Digest, 706 (1984).
3. J. S. Fu, C. L. Axness, and H. T. Weaver, “Two-Dimensional Dimensional Simulation of Single-Event Induced Bipolar Current in CMOS Structure” IEEE Trans. Nucl. Sci., NS-31, 1155 (1984).
4. M. S. Mock, “Numerical Analysis of Semiconductor Devices and Integrated Circuits”, B. T. Browne and J. J. H. Miller, eds., Boole Press, Dublin (1981).
5. J. S. Fu, C. L. Axness, and H. T. Weaver, “Memory SEU Simulations Using 2D Transport Calculations,” IEEE Trans. Electr. Dev. Lett. EDL-6, 422 (1985).
6. J. S. Fu, C. L. Axness and H. T. Weaver, “Transient Two-Dimensional Simulation of A Cosmic Event on a CMOS SRAM Cell,” Proc. 1985 Intern. Sympos. on VLSI Technology, Systems and Application, May 8- 10, Taipei, Taiwan, 245 (1985).
7. J. Dziewior and W. Schmid, “Auger Coefficients for Highly Doped and Highly Excited Silicon,” Applied Phys. Lett., Vol.31, 346 (1977).