Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Solid State Electronics

Volumn 24, Issue 9, 1981, Pages 821-825

  Dorkel, J M ^a,b   Leturcq, Ph ^a,b  

^a CNRS   (France)

^b INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

EID: 0019608025     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(81)90097-6     Document Type: Article

References (20)

1. Accurate calculations of the forward drop and power dissipation in thyristors
2. Die Temperaturabhängigkeit der Defektelektronenbeweglichkeit in Siliziumkristallen
3. The High Current Limit for Semiconductor Junction Devices
4. Theory of a forward-biased diffused-junction P-L-N rectifier—Part I: Exact numerical solutions
5. Quantum Transport Theory of Impurity-Scattering-Limited Mobility in n-Type Semiconductors Including Electron-Electron Scattering
6. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
7. Diffusion of Boron from Shallow Ion Implants in Silicon
8. Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I