Soft error stability of p-well versus n-well CMOS latches derived from 2-D transient simulations

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1988, Pages 512-515

  Weaver, H T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONS; RADIATION EFFECTS--COMPUTER SIMULATION; TRANSISTORS--RADIATION EFFECTS;

HIGH-ENERGY ION STRIKES; P-WELL VS. N-WELL CMOS LATCHES; SATURATION EFFECTS; SOFT ERROR STABILITY; SOFTWARE PACKAGE SIFCOD;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024175922     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)