Alpha-, boron-, silicon- and iron- ion-induced current transients in low-capacitance silicon and GaAs diodes

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1578-1584

  Wagner, Ronald S ^a   Bordes, Nicole ^a   Bradley, Jeffrey M ^a   Maggiore, Carl J ^a   Knudson, Alvin R ^b   Campbell, Arthur B ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

ALPHA PARTICLES; CURRENT TRANSIENTS; LINEAR ENERGY TRANSFER;

SEMICONDUCTOR DIODES;

EID: 0024169725     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25501     Document Type: Article

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