RAM Cell Recovery Mechanisms Following High-Energy Ion Strikes

IEEE Electron Device Letters

Volumn 8, Issue 1, 1987, Pages 7-9

  Weaver, Harry T ^a   Axness, C L ^a   Fu, J S ^a   Binkley, J S ^b   Mansfield, J ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; SEMICONDUCTOR DEVICES - TRANSIENTS;

HIGH-ENERGY ION STRIKE; RANDOM ACCESS MEMORY (RAM) CELL; SINGLE EVENT UPSET (SEU);

SEMICONDUCTOR DEVICES, MOS;

EID: 0023145538     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1987.26532     Document Type: Article

References (9)

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