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Volumn 36, Issue 11, 1989, Pages 2567-2575

A Cross Section of α-Particle-Induced Soft-Error Phenomena in VLSI's

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS--RADIATION EFFECTS; SEMICONDUCTOR DEVICES--RADIATION EFFECTS;

EID: 0024765647     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43681     Document Type: Article
Times cited : (24)

References (15)
  • 1
    • 0020765547 scopus 로고
    • Collection of charge from alpha-particle tracks in silicon devices
    • C.H. Hsieh, P.C. Murley, and R.R. O'Rien, “Collection of charge from alpha-particle tracks in silicon devices,” IEEE Trans. Electron Devices, vol. ED-30, no. 6, pp. 686–693, 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.6 , pp. 686-693
    • Hsieh, C.H.1    Murley, P.C.2    O'Rien, R.R.3
  • 2
    • 0018331014 scopus 로고
    • Alpha particle-induced soft errors in dynamic memories
    • Jan.
    • T.C. May and M.H. Woods, “Alpha particle-induced soft errors in dynamic memories,” IEEE Trans. Electron Devices, vol. ED-26, no. 1, pp. 2–9. Jan. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , Issue.1 , pp. 2-9
    • May, T.C.1    Woods, M.H.2
  • 3
    • 0022734219 scopus 로고
    • Alpha-particle-induced induced charge transfer between closely spaced memory cells
    • J. Chern, P. Yang, P. Pattnaik, and J.A. Seitchik “Alpha-particle-induced induced charge transfer between closely spaced memory cells,” IEEE Trans. Electron Devices, vol. ED-33, no. 6, pp. 822–834, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , Issue.6 , pp. 822-834
    • Chern, J.1    Yang, P.2    Pattnaik, P.3    Seitchik, J.A.4
  • 5
    • 0021437135 scopus 로고
    • A corrugated capacitor cell (CCC)
    • H. Sunami et al., “A corrugated capacitor cell (CCC),” IEEE Trans. Electron Devices, vol. ED-31, no. 6, p. 746, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.6 , pp. 746
    • Sunami, H.1
  • 6
    • 0006405069 scopus 로고
    • Three-dimensional dimensional device simulator CADDETH with highly convergent matrix solution algorithms
    • Oct.
    • T. Toyabe, H. Masuda, Y. Aoki, H. Shukuri, and Hagiwara, “Three-dimensional dimensional device simulator CADDETH with highly convergent matrix solution algorithms,” IEEE Trans. Electron Devices, vol. ED-32, no. 10, pp. 2038–2044. Oct. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.10 , pp. 2038-2044
    • Toyabe, T.1    Masuda, H.2    Aoki, Y.3    Shukuri, H.4    Hagiwara5
  • 8
    • 0020115980 scopus 로고
    • A soft error rate model for MOS dynamic RAM's
    • T. Toyabe et al. “A soft error rate model for MOS dynamic RAM's,” IEEE Trans. Electron Devices, vol. ED-29, pp. 732–737, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 732-737
    • Toyabe, T.1
  • 9
    • 0023586536 scopus 로고
    • Experimental characterization of a-induced charge collection mechanism for megabit DRAM cells
    • K. Takeuchi et al. “Experimental characterization of a-induced charge collection mechanism for megabit DRAM cells,” in Proc. Symp. VLSI Technol., 1987.
    • (1987) Proc. Symp. VLSI Technol.
    • Takeuchi, K.1
  • 10
    • 0020091827 scopus 로고
    • Alpha-particle-induced field and enhanced collection of carriers
    • C. Hu “Alpha-particle-induced field and enhanced collection of carriers,” IEEE Electron Device Lett., vol. EDL-3, pp. 31–34, 1982.
    • (1982) IEEE Electron Device Lett. , vol.EDL-3 , pp. 31-34
    • Hu, C.1
  • 11
  • 12
    • 0023014325 scopus 로고
    • The scaling law of alpha-particle induced soft errors for VLSI's
    • E. Takeda et al., “The scaling law of alpha-particle induced soft errors for VLSI's,” in IEDM Tech. Dig., 1986, pp. 542–545.
    • (1986) IEDM Tech. Dig. , pp. 542-545
    • Takeda, E.1
  • 13
    • 0018456156 scopus 로고
    • Short-channel MOSFET's in the punchthrough current mode
    • J.J. Barns, K. Shimohigashi, and R.W. Dutton “Short-channel MOSFET's in the punchthrough current mode,” IEEE Trans. Electron Devices, vol. ED-26, pp. 446–453, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 446-453
    • Barns, J.J.1    Shimohigashi, K.2    Dutton, R.W.3
  • 15
    • 0023843852 scopus 로고
    • A new soft error phenomenon in VLSIs—The alpha-particle source-drain penetration (ALPEN)
    • E. Takeda, D. Hisamoto, and T. Toyabe, “A new soft error phenomenon in VLSIs—The alpha-particle source-drain penetration (ALPEN),” in Proc. Int. Reliability Phys. Symp., 1988, pp. 109–112.
    • (1988) Proc. Int. Reliability Phys. Symp. , pp. 109-112
    • Takeda, E.1    Hisamoto, D.2    Toyabe, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.