Monte-Carlo Simulation of the Dynamic Behavior of a CMOS Inverter Struck by a Heavy ion

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 619-624

  Brisset, C ^a   Dollfus, P ^a   Hesto, P ^a   Musseau, O M O ^b  

^a UNIV PARIS SUD   (France)

^b CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; GEOMETRY; IONS; MONTE CARLO METHODS; MOSFET DEVICES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSIENTS;

BOLTZMANN TRANSPORT EQUATION; CMOS INVERTER; ELECTRON HOLE PAIRS; HEAVY IONS; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0028447320     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299809     Document Type: Article

References (18)

1. E. L. Petersen, J. C. Pickel, J. H. Adams and E. C. Simth, “Rate prediction for single event effects.”, IEEE Trans. Nucl. Sci., Vol. 39, pp. 1577–1599, December 1992.
2. S. Buchner, K. Kang, W. J. Stapor and S. Rivet, “Spatial and temporal dependence of SEU in a 64 K SRAM.”, IEEE Trans. Nucl. Sci., Vol. 39, pp. 1630–1635, December 1992.
3. Y. Kanda, “What kinds of SOI wafers are suitable for what micromachining purposes ?", Sensors and Actuators, Vol. 34, pp. 211–215, February 1992.
4. J. L. Leray, E. Dupont-Nivet, J. F. Péré, Y. M. Coïc and M. Raffaelli, “CMOS/SOI hardening at 100 Mrad(SiO2).”, IEEE Trans. Nucl. Sci., Vol. 37, pp. 2013–2019, 1990.
5. P. S. Winokur, F. W. Sexton, J. R. Schwank, D. M. Fleetwood, P. V. Dressendorfer, T. F. Wrobel and D. C. Turpin, “Total-dose Radiation and Annealing Studies:
6. Implications for Hardness Assurance Testing.”, IEEE Trans. Nucl. Sci., Vol. 33, pp. 1343–1351, 1986.
7. R. H. Ritchie and V. E. Anderson, “Electrons slowing-down cascade spectra in solids.”, IEEE Trans. Nucl. Sci., Vol. 19, pp. 141–148, 1972.
8. L. W. Massengill, D. V. Kerns, S. E. Kerns and M. L. Alles, “Single-Event Charge Enhancement in SOI Devices.”, IEEE Electron Device Lett., Vol. EDL-11 pp. 98–99, February 1990.
9. T. Aoki, R. Kasai and M. Tomizawa, “Numerical Analysis of Heavy Ion Particle-Induced CMOS Latch-up.”, IEEE Electron Device Lett., Vol. EDL-7, pp. 273–275, May 1986.
10. P. Dollfus, S. Galdin, P. Hesto, “Microwave analysis of AlGaAs/InGaAs HEMT using Monte-carlo simulation.”, Electronics Letters, vol. 28, pp. 458, 1992.
11. S. Galdin, P. Hesto, J. F. Pone and P. Dollfus, “Monte-Carlo Carlo study of the non-stationary transport in Si-SiGe HJBTs.”, Semicon. Sci. and Technol., Vol. 7, pp. B540-B542, 1992.
12. C. Jacoboni and L. Reggiani, Reviews of modern Physics, Vol. 55, pp. 645–705, July 1983.
13. P. Dollfus, C. Bru, and P. Hesto, “Monte-Carlo simulation of pseudomorphic High Electron Mobility Transistors: physical limitations at ultra-short gate length", J. Appl. Phys., Vol. 73, pp. 804–812, January 1993.
14. L. Rajaonarison, P. Hesto, J. F. Pone and P. Dollfus, “Monte-Carlo simulation of submicronic devices and processes", Proc. 4th Int. Conf. on Simulation of Semiconductor Devices and Processes, Zürich, Hartung-Gorre Verlag Press, pp. 513–520, September 1991.
15. A. A Ketterson and H. Morkoc, “GaAs/AlGaAs and InGaAs/AlGaAs MODFET Inverter simulations.”, IEEE Trans. on Electron Devices, Vol. ED-33, pp. 1626–1633, November 1986.
16. J. C. Pickel and J. T. Blandford, “CMOS RAM Cosmic-Ray Induced Error Rate Analysis.”, IEEE Trans. Nucl. Sci., Vol. 28, pp. 3962–3967, December 1981.
17. J. F. Ziegler, “Handbook of stopping cross-sections for energetic ions in all elements", in “The stopping and ranges of ions in matter", Vol. 5, ed. J. F. Ziegler, Pergamon Press, 1980.
18. P. Hesto, O. Musseau, P. Dollfus, M. Mouis, C. Brisset, “Monte-Carlo Modelling of a MISFET/SOI Struck by an Energetic Heavy Ion.”, Proc. Conf. RADECS’91, IEEE catalog number: 91TH0400-2, pp. 205–208, September 1991.