Numerical Studies of Charge Collection and Funneling in Silicon Device

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1161-1166

  Grubin, H L ^a   Kreskovsky, J P ^a   Weinberg, B C ^a  

^a Scientific Research Associates Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

CHARGE COLLECTION; CHARGE FUNNELING; SINGLE-EVENT UPSETS;

SEMICONDUCTOR DIODES;

EID: 0021582516     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333475     Document Type: Article

References (5)

1. Hsieh, C.M., Murley, P.C., and O’Brien, R.R.: IEEE Electron Device Letts. EDL-2, 103 (1981).
2. Kreskovsky, J.P., Grubin, H.L., and Weinberg, B.C., Scientific Research Associates Report R-940002F.
3. Kurata, M., Numerical Analysis for Semiconductor Devices, Lexington Books, 1982.
4. Messenger, G.C., IEEE Trans. Nucl. Sci. NS-29, 2024, (1982).
5. Oldham, T.R., and McLean, F.B., IEEE Trans. Nucl. Sci., NS-30, 4493 (1983).