A Measurement Method of the Injection Dependence of the Conductivity Mobility in Silicon

IEEE Electron Device Letters

Volumn 16, Issue 3, 1995, Pages 91-93

  Bellone, S ^a   Persiano, G V ^b   Strollo, A G M ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SUBSTRATES; TERMINALS (ELECTRIC); THYRISTORS;

CONDUCTIVITY MOBILITY; EPITAXIAL WAFER; INJECTION CONTROL; INJECTION DEPENDENCE; MOBILITY MEASUREMENT;

SEMICONDUCTING SILICON;

EID: 0029273461     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.363234     Document Type: Article

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