Lateral charge transport from heavy-ion tracks in integrated circuit chips

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1644-1647

  Zoutendyk, J A ^a   Schwartz, H R ^a   Nevill, L R ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE, DIGITAL--RANDOM ACCESS; ION BEAMS; MATHEMATICAL MODELS;

ELECTRON-HOLE PAIRS; LATERAL CHARGE TRANSPORT;

INTEGRATED CIRCUITS;

EID: 0024173918     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25513     Document Type: Article

References (2)

1. J.A. Zoutendyk, H.R. Schwartz, R.K. Watson, Z. Hasnain, and L.R. Nevill, “Single-event upset (SEU) in a DRAM with on-chip error correction,” IEEE Trans. Nucl. Sci., vol. NS-34, no.6, pp. 1310–1315, Dec. 1987.
2. J.A. Zoutendyk, L.S. Smith, G.A. Soli, and R.Y. Lo, “Experimental evidence for a new single-event upset (SEU) mode in CMOS SRAM obtained from model verification,” IEEE Trans. Nucl. Sci., vol. NS-34, no. 6, pp. 1292–1299, Dec. 1987.