Critical issues for interfaces to p-type SiC and GaN in power devices

Applied Surface Science

Volumn 258, Issue 21, 2012, Pages 8324-8333

  Roccaforte, F ^a   Frazzetto, A ^a,b   Greco, G ^a,b   Giannazzo, F ^a   Fiorenza, P ^a   Nigro, R Lo ^a   Saggio, M ^c   Leszczynski M ^d   Pristawko, P ^d   Raineri, V ^a  

^a CNR   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

GaN; HEMT; Interfaces; JBS; MOSFET; Ohmic contacts; SiC

Indexed keywords

CONTACTS (FLUID MECHANICS); DIELECTRIC DEVICES; ELECTRIC CONTACTORS; ENERGY GAP; GALLIUM NITRIDE; GOLD COMPOUNDS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); METALS; MICROSTRUCTURAL EVOLUTION; MOS DEVICES; MOSFET DEVICES; NICKEL COMPOUNDS; OHMIC CONTACTS; OXIDE SEMICONDUCTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON CARBIDE; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

FUNDAMENTAL BUILDING BLOCKS; GALLIUM NITRIDE (GAN); GAN-BASED STRUCTURES; METAL-OXIDE-SEMICONDUCTOR INTERFACES; MOS-FET; SCHOTTKY BARRIER HEIGHTS; SILICON CARBIDES (SIC); WIDE BAND-GAP MATERIAL;

POWER SEMICONDUCTOR DEVICES;

EID: 84862896510     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.03.165     Document Type: Conference Paper

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