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Volumn 711, Issue , 2012, Pages 134-138

Nano-analytical and electrical characterization of 4H-SiC MOSFETs

(9) Beltran, Ana M a Schamm Chardon, Sylvie a Mortet, Vincent a Lefebvre, Matthieu a Bedel Pereira, Elena a Cristiano, Fuccio a Strenger, Christian b Häublein, Volker b Bauer, Anton J b

a UNIVERSITÉ DE TOULOUSE (France)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

4H SiC MOSFETs; Hall mobility; HRTEM; Spatially resolved EELS

Indexed keywords

ELECTRON MOBILITY; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOSFET DEVICES; POWER ELECTRONICS; SILICA; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

4H-SIC MOSFETS; CARBON DISTRIBUTION; ELECTRICAL CHARACTERIZATION; HRTEM; MOBILITY DEGRADATION; PARTICULAR CONDITION; POWER ELECTRONIC DEVICES; SPATIALLY-RESOLVED EELS;

SILICON CARBIDE;

EID: 84856966006 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.711.134 Document Type: Conference Paper

Times cited : (2)

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