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Applied Physics A: Materials Science and Processing

Volumn 100, Issue 1, 2010, Pages 197-202

Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8°off-axis 4H-SiC

(6) Roccaforte, Fabrizio a Weng, Ming Hung a Bongiorno, Corrado a Giannazzo, Filippo a Iucolano, Ferdinando a Raineri, Vito a

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; ALGAN/GAN HETEROSTRUCTURES; ELECTRICAL ANALYSIS; MATERIAL DEFECT; MISCUT DIRECTION; NEAR-SURFACE; OFF-AXIS; OPTIMAL DEVICES; ORTHOGONAL DIRECTIONS; STRUCTURAL CHARACTERIZATION; STRUCTURAL DEFECT; V-SHAPED DEFECTS;

CRYSTALS; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; SILICON CARBIDE; SURFACE DEFECTS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954089785 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5683-3 Document Type: Article

Times cited : (10)

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