SiC and GaN MOS interfaces- Similarities and differences

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 473-478

  Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC and 2H GaN; Field effect mobility; HRTEM imaging; Interface state density; Threshold voltage control

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; HALL MOBILITY; III-V SEMICONDUCTORS; INTERFACE STATES; MOSFET DEVICES; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

4H-SIC AND 2H-GAN; CHANNEL ELECTRONS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GATE OXIDE PROCESS; INTERFACE STATE DENSITY; PROGRESSIVE REFINEMENT; SUBTHRESHOLD SLOPE;

SILICON CARBIDE;

EID: 77955438621     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.473     Document Type: Conference Paper

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