Influence of surface treatment and annealing temperature on the formation of low-resistance Au/Ni ohmic contacts to p-GaN

Journal of Electronic Materials

Volumn 38, Issue 4, 2009, Pages 545-550

  Chary, I ^a   Chandolu, A ^a   Borisov, B ^a   Kuryatkov, V ^a   Nikishin, S ^a   Holtz, M ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

HRXRD; Interface; Ohmic contact; P GaN; Specific contact resistance

Indexed keywords

ANNEALING TEMPERATURES; BEFORE AND AFTER; GALLIDES; HIGH RESOLUTION X-RAY DIFFRACTIONS; HRXRD; INTER DIFFUSIONS; INTERFACE; LARGE DEVIATIONS; LAYER INTERFACES; LOW RESISTANCES; METALLIZATION; P-GAN; ROOM TEMPERATURES; SPECIFIC CONTACT RESISTANCE;

ANNEALING; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD ALLOYS; HOLE CONCENTRATION; NICKEL ALLOYS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION ANALYSIS;

SURFACE TREATMENT;

EID: 61849114675     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0655-5     Document Type: Conference Paper

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