Investigations on the origin of the ohmic behavior for Ti/Al based contacts on n-type GaN

Materials Science Forum

Volumn 711, Issue , 2012, Pages 208-212

  Thierry Jebali, N ^a,b   Menard O ^c   Dubois, C ^d   Tournier, D ^b   Collard, E ^e   Brylinski, C ^a   Cayrel, F ^c   Alquier, D ^c  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b Univ Claude Bernard Lyon1   (France)

^c UNIVERSITÉ DE TOURS   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^e STMICROELECTRONICS   (France)

Author keywords

Gallium nitride; Ohmic contact; SIMS; Ti Ti

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; TITANIUM; WIDE BAND GAP SEMICONDUCTORS;

ANNEALING CONDITION; DOPING CONCENTRATION; ELECTRICAL CHARACTERIZATION; HIGH DOPING LEVEL; N-TYPE GAN; NITROGEN VACANCIES; OHMIC BEHAVIOR; SIMS DEPTH PROFILE;

TITANIUM NITRIDE;

EID: 84856951036     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.711.208     Document Type: Conference Paper

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