Carbon-cap for ohmic contacts on ion-implanted 4H-SiC

Electrochemical and Solid-State Letters

Volumn 13, Issue 12, 2010, Pages

  Nipoti, R ^a   Mancarella, F ^a   Moscatelli, F ^a   Rizzoli, R ^a   Zampolli, S ^a   Ferri, M ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMMONLY USED; ELECTRICAL CHARACTERIZATION; ELECTRICAL RESISTIVITY; GRAPHITIC PHASE; IN-VACUUM; MICRO-RAMAN; NANOCRYSTALLINES; POSTIMPLANTATION ANNEALING; PROCESSING STEPS; PYROLYZED PHOTORESIST FILMS; ROOM TEMPERATURE; SPECIFIC CONTACT RESISTANCES; STEP BUNCHING;

ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTORS; IONS; OHMIC CONTACTS; PHOTORESISTS; REACTIVE ION ETCHING; SILICON CARBIDE; SILICON WAFERS; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958457263     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3491337     Document Type: Article

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