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Physica Status Solidi (B) Basic Research

Volumn 245, Issue 7, 2008, Pages 1315-1326

Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide

(3) Rambach, M a Bauer, A J b Ryssel, H a,b

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 55449091148 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.200743510 Document Type: Review

Times cited : (45)

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