Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H- And 6H-SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 881-884

  Scorzoni, A ^a,b,c   Moscatelli, F ^a,b,c   Poggi, A ^c   Cardinali, G C ^c   Nipoti, R ^c  

^a UNIVERSITY OF PERUGIA   (Italy)

^b INFN SEZIONE DI PERUGIA   (Italy)

^c CNR   (Italy)

Author keywords

Al Ti contacts; Contact resistivity; P type SiC; Schottky barrier height

Indexed keywords

ALUMINUM; CARRIER MOBILITY; DATA REDUCTION; ELECTRIC LINES; ION IMPLANTATION; MATHEMATICAL MODELS; SILICON CARBIDE;

AL/TI CONTACTS; CONTACT RESISTIVITY; P-TYPE SIC; SCHOTTKY BARRIER HEIGHT;

OHMIC CONTACTS;

EID: 8744299957     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.881     Document Type: Conference Paper

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