Interfaces between 4H-SIC and SiO 2: Microstructure, nanochemistry, and near-interface traps

Journal of Applied Physics

Volumn 97, Issue 3, 2005, Pages

  Pippel, Eckhard ^a   Woltersdorf, Jörg ^a   Ólafsson, Halldor Ö ^b   Sveinbjörnsson, Einar Ö ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CARBON; CARBON CLUSTERS; ELECTRON ENERGY-LOSS NEAR-EDGE SPECTROSCOPY; ENERGY-FILTERED TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MICROSTRUCTURE; DENSITY (SPECIFIC GRAVITY); DEPOSITION; NANOTECHNOLOGY; SILICA; SILICON CARBIDE; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACES (MATERIALS);

EID: 13744252692     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1836004     Document Type: Article

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