Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Frazzetto, Alessia ^a,c   Giannazzo, Filippo ^a   Nigro, Raffaella Lo ^a   Franco, Salvatore Di ^a   Bongiorno, Corrado ^a   Saggio, Mario ^b   Zanetti, Edoardo ^b   Raineri, Vito ^a   Roccaforte, Fabrizio ^a  

^a CNR   (Italy)

^b STMICROELECTRONICS   (Italy)

^c SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTORS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY; NANOTECHNOLOGY; OHMIC CONTACTS; SILICON CARBIDE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; X RAY POWDER DIFFRACTION; ALUMINUM; ELECTRIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSION LINE THEORY; X RAY DIFFRACTION ANALYSIS;

CAPPING LAYER; CONDUCTIVE AFM; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; IMPLANTED LAYERS; LOCAL CURRENT MEASUREMENT; NANO SCALE; SPECIFIC CONTACT RESISTANCES; TRANSMISSION LINE MODELING; AFM; P-TYPE; TRANSMISSION LINE MODELS;

ALUMINUM COMPOUNDS; SILICON CARBIDE;

EID: 84255190959     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-158     Document Type: Review

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