The effects of implant activation anneal on the effective inversion layer mobility of 4H-SiC MOSFETs

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 666-671

  Haney, Sarah ^a   Agarwal, Anant ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

Bulk traps; Effective inversion layer electron mobility; Interface traps; SiC; SiC SiO2 interface

Indexed keywords

ANNEAL TEMPERATURES; BULK TRAPS; EFFECTIVE INVERSION LAYER ELECTRON MOBILITY; INTERFACE TRAPS; MOSFETS;

ANNEALING; DOPING (ADDITIVES); FABRICATION; PHOSPHORUS; SEMICONDUCTOR GROWTH;

TRANSISTORS;

EID: 42249110176     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0310-6     Document Type: Conference Paper

References (4)

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3. A. Agarwal and S. Haney, J. Electronic Materials, current issue
4. C.-Y. Lu, J. Cooper, T. Takashi, G. Chung, J. Williams, K. McDonald, L. Feldman, IEEE Electron Device Lett., vol. 50, no. 7, pp.1582, 2003