Simultaneous formation of p- And n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

Journal of Electronic Materials

Volumn 34, Issue 10, 2005, Pages 1310-1312

  Tsukimoto, S ^a   Sakai, T ^a   Onishi, T ^a   Ito, Kazuhiro ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC; Ni Ti Al; Ohmic contact; Simultaneous formation

Indexed keywords

ANNEALING; MOSFET DEVICES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; TERNARY SYSTEMS;

4H-SIC; NI/TI/AL; SIMULTANEOUS FORMATION; SPECIFIC CONTACT RESISTANCE;

SILICON CARBIDE;

EID: 27144433237     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0255-6     Document Type: Review

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