Development of SiC diodes, power MOSFETs and intelligent power modules

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 10, 2009, Pages 2403-2416

  Nakamura, Takashi ^a   Miura, Mineo ^a   Kawamoto, Noriaki ^a   Nakano, Yuki ^a   Otsuka, Takukazu ^a   Oku Mura, Keiji ^a   Kamisawa, Akira ^a  

^a ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SIZES; FORWARD CURRENTS; GATE OXIDE FILMS; HAND IMAGES; HETEROJUNCTION DIODES; INTELLIGENT POWER MODULE; ON-RESISTANCE; POWER DEVICES; POWER MOSFETS; POWER-SAVING; SIC DIODES; TRENCH MOSFETS;

AVALANCHE DIODES; CRYSTAL DEFECTS; DIODES; ELECTRIC EQUIPMENT; HETEROJUNCTIONS; MOS DEVICES; MOSFET DEVICES; OXIDE FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350015051     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925196     Document Type: Article

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