Ni-Au contacts to p-type GaN - Structure and properties

Solid-State Electronics

Volumn 54, Issue 7, 2010, Pages 701-709

  Smalc Koziorowska, Julita ^a,b   Grzanka, Szymon ^c   Litwin Staszewska, Elbieta ^a   Piotrzkowski, Ryszard ^a   Nowak, Grzegorz ^a   Leszczynski, Michał ^a,c   Perlin, Piotr ^a,c   Talik, Ewa ^d   Kozubowski, Jan ^b   Krukowski, Stanisław ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c TOPGAN LTD   (Poland)

^d UNIVERSITY OF SILESIA   (Poland)

Author keywords

Annealing; Contacts; Electron microscopy; Gallium nitride

Indexed keywords

AMBIENT ATMOSPHERE; ANNEALING PROCEDURES; BASIC MECHANISM; CHEMICAL SPECIES; CONTACT FORMATION; CONTACT STRUCTURE; CONTACTS; HIGH RESISTIVITY; LOW RESISTIVITY; MICROSCOPIC TECHNIQUES; NONUNIFORMITY; P-TYPE GAN; SEM; STRUCTURE AND PROPERTIES; TEM;

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SCANNING ELECTRON MICROSCOPY;

EID: 77955329998     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.01.026     Document Type: Article

References (41)

1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki P-type conduction in Mg-doped GaN treated with Low-Energy Electron Beam Irradiation (LEEBI) Jpn J Appl Phys Part-2 - Lett 28 1989 L2112
2. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa Thermal annealing effects on P-type Mg-doped GaN films Jpn J Appl Phys Part-2 - Lett 31 1992 L139
3. S. Nakamura, M. Senoh, and T. Mukai Highly P-typed Mg-doped GaN films grown with GaN buffer layers Jpn J Appl Phys Part-2 - Lett 30 1991 L1708
4. R. Piotrzkowski, E. Litwin-Staszewska, T. Suski, and I. Grzegory Study of dopant activation in bulk GaN:Mg Phys B 47 2001 308
5. E. Litwin-Staszewska, T. Suski, R. Piotrzkowski, I. Grzegory, M. Bockowski, and J.L. Robert Temperature dependence of electrical properties of gallium-nitride bulk single crystals doped with Mg and their evolution with annealing J Appl Phys 89 2001 7960 (Pubitemid 32616233)
6. G. Kamler, J. Borysiuk, J.L. Weyher, R. Czernecki, M. Leszczyński, and I. Grzegory Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers J Cyst Growth 45 2005 282
7. S. Pezzagna, P. Vennegues, N. Grandjean, and J. Massie J Cyst Growth 269 2004 249
8. Z. Liliental-Weber, J. Jasiński, M. Benamara, I. Grzegory, S. Porowski, and D.J.H. Lampert Influence of dopants on defect formation in GaN Phys Stat Sol B 228 2001 345
9. T. Mori, T. Kozawa, T. Owaki, Y. Taga, S. Nagai, and S. Yamasaki Schottky barriers and contact resistances on p-type GaN Appl Phys Lett 69 1996 3537
10. L.L. Smith, R.F. Davis, M.J. Kim, R.W. Carpenter, and Y. Huang Schottky barriers and contact resistances on p-type GaN J Mater Res 12 1997 2249
11. K.V. Vassilevski, M. Rastegaeva, A.I. Babanin, I.P. Nikitina, and V.A. Dmitriev Ti/Ni ohmic contacts to n-type gallium nitride MRS Internet J Nitride Semicond Res 1 1996 38
12. Yamaoka Y, Kaneko Y, Nakagawa S, Hamada N. In: Proceeding of the second international conference on nitride semiconductors, Tokushima, Japan, 27-31 October 1997. p. 1.
13. D.J. King, L. Hang, J.C. Ramer, S.D. Hersee, and L.F. Lester Temperature behavior of Pt/Au ohmic contacts to p-GaN Mater Res Soc Symp Proc 460 1997 421
14. T. Kim, M.C. Yoo, and T. Kim Cr/Ni/Au ohmic contacts to the moderately-doped p- and n-GaN Mater Res Soc Symp Proc 449 1997 1061
15. T. Kim, J. Kim, S. Chae, and T. Kim Low resistance contacts to p-type GaN Mater Res Soc Symp Proc 468 1997 427
16. J.T. Trexler, S.J. Pearton, P.H. Halloway, M.G. Mier, K.R. Evans, and R.F. Karlicek Comparison of Ni/Au, Pd/Au, Cr/Au metallization for ohmic contacts to p-GaN Mater Res Soc Symp Proc 449 1997 1091
17. J.K. Kim, J.-L. Lee, J.W. Lee, H.E. Shin, Y.J. Park, and T. Kim Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment Appl Phys Lett 73 1998 2953
18. J.-S. Jang, I.-S. Chang, H.-K. Kim, T.-Y. Seong, S. Lee, and S.-J. Park Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN Appl Phys Lett 74 1999 70
19. J.-S. Jang, H.-G. Kim, K.-H. Park, C.-S. Um, I.-K. Han, and S.-H. Kim Formation of Ni/Pt/Au ohmic contacts to p-GaN Mater Res Soc Symp Proc 482 1997 1053
20. E. Kaminska, A. Piotrowska, A. Barcz, M. Guziewicz, S. Kasjaniuk, and M.D. Bremser Ni/Si-based ohmic contacts to p- and n-type GaN Mater Res Soc Symp Proc 482 1999 1077
21. D.-H. Youn, M. Hao, H. Sato, T. Suhugara, Y. Naoi, and S. Sakai Comparison and investigation of ohmic characteristics in the Ni/AuZn and Cr/AuZn metal schemes Jpn J Appl Phys Part 1 37 1998 4667
22. J.-K. Ho, C.-S. Jong, C.C. Chiu, C.-N. Huang, C.-Y. Chen, and K.-K. Shih Low-resistance ohmic contacts to p-type GaN Appl Phys Lett 74 1999 1275
23. L.-C. Chen, F.-R. Chen, J.-J. Kai, L. Chang, J.-K. Ho, and C.-S. Jong Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN J Appl Phys 86 1999 3826
24. J.-K. Ho, C.-S. Jong, C.C. Chiu, C.-N. Huang, C.-Y. Chen, and K.-K. Shih Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films J Appl Phys 86 1999 4491
25. L.-C. Chen, J.-K. Ho, C.-S. Jong, C.C. Chiu, K.-K. Shih, and F.-R. Chen Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN Appl Phys Lett 76 2000 3703
26. Y. Koide, T. Maeda, T. Kawakami, S. Fujita, T. Uemura, and N. Shibata Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN J Electron Mater 28 1999 341
27. T. Maeda, Y. Koide, and M. Murakami Effects of NiO on electrical properties of NiAu-based ohmic contacts for p-type GaN Appl Phys Lett 75 1999 4145
28. J.-L. Lee, M. Weber, J.K. Kim, J.W. Lee, Y.J. Park, and K. Lynn Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy Appl Phys Lett 74 1999 2289
29. H.W. Jang, S.Y. Kim, and J.-L. Lee Mechanism for ohmic contact formation of oxidized Ni/Au on p-type GaN J Appl Phys 94 2003 1748
30. H. Omiya, F.A. Ponce, H. Marui, S. Tanaka, and T. Mukai Atomic arrangement at the Au/p-GaN interface in low-resistance contacts Appl Phys Lett 85 2004 6143
31. x in Au/Ni/p-type GaN ohmic contacts annealed in air J Electron Mater 32 2003 341
32. C.Y. Hu, Z.X. Qin, Z.Z. Chen, Z.J. Yang, T.J. Yu, and X.D. Hu Influence of various annealing temperatures on microstructure evolution of oxidized Ni/Au ohmic contact to p-GaN studied by synchrotron X-ray diffraction J Cryst Growth 285 2005 333
33. x-based contacts on p-GaN J Mater Sci: Mater Electron 19 2008 855
34. I. Grzegory High-pressure crystallization of GaN for electronic applications J Phys: Condens Matter 14 2002 11055
35. I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski Acta Phys Pol A 100 2001 57
36. 3 by metal-organic chemical-vapor deposition Appl Phys Lett 75 1999 4159 4161
37. S. Porowski, I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, and T. Suski Blue lasers on high pressure grown GaN single crystal substrates Europhys News 35 2004 69
38. S. Krukowski, P. Kempisty, P. Strak, G. Nowak, R. Czernecki, and M. Leszczynski Modelling the growth of nitrides in ammonia-rich environment Crystal Res Technol 42 2007 1281
39. D.K. Schroder Semiconductor material and device characterization 2nd ed. 1998 Wiley New York
40. L. Lewis, P.P. Maaskant, and B. Corbett On the specific contact resistance of metal contacts to p-type GaN Semicond Sci Technol 21 2006 1738
41. T. Massalski Binary alloys phase diagrams 1992 AMS International Ohio