Effects of cap layer on ohmic Ti/Al contacts to Si + implanted GaN

Applied Surface Science

Volumn 255, Issue 12, 2009, Pages 6057-6060

  Placidi, Marcel ^a   Perez Tomas A ^a   Constant, A ^a   Rius, G ^a   Mestres, N ^b   Millan J ^a   Godignon, P ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

Cap layer; Implantation to GaN; Ti Al contacts

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METAL ANALYSIS; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SILICA; X RAY DIFFRACTION;

CAP LAYERS; ELECTRICAL MEASUREMENT; LOW RESISTIVITY; METAL COMBINATION; POSTIMPLANTATION ANNEALING; REPRODUCIBILITIES; SPECIFIC CONTACT RESISTIVITY; XRD (X RAY DIFFRACTION);

TITANIUM COMPOUNDS;

EID: 62349110652     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.12.084     Document Type: Article

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