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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4896-4901

Highly reliable 250 W GaN high electron mobility transistor power amplifier

(1) Kikkawa, Toshihide a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

Base station; GaN; HEMT; Power amplifier; Push pull; Reliability; W CDMA

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; RELIABILITY; SILICON CARBIDE; TRANSMITTERS;

BASE STATION; GAN; PUSH-PULL; W-CDMA;

GALLIUM NITRIDE;

EID: 30944469459 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.4896 Document Type: Article

Times cited : (70)

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