Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC

Materials Science and Engineering: B

Volumn 98, Issue 3, 2003, Pages 286-293

  Konishi, Ryohei ^a   Yasukochi, Ryuichi ^a   Nakatsuka, Osamu ^b   Koide, Yasuo ^a   Moriyama, Miki ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

NiAl; NiTiAl; Ohmic contact; P type silicon carbide

Indexed keywords

ANNEALING; BINARY ALLOYS; CARRIER CONCENTRATION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; INTERFACES (MATERIALS); MICROSTRUCTURE; OHMIC CONTACTS; SILICON CARBIDE; TEMPERATURE; TERNARY SYSTEMS; THERMODYNAMIC STABILITY;

SPECIFIC CONTACT RESISTANCE;

NICKEL ALLOYS;

EID: 0038443041     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00065-5     Document Type: Article

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