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Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

(6) Greco, G a,b Prystawko, P c Leszczyski, M c Lo Nigro, R a Raineri, V a Roccaforte, F a

a CNR IMM (Italy)

b SCUOLA SUPERIORE DI CATANIA (Italy)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONDUCTIVE AFM; DIFFERENT TRANSPORT MODELS; ELECTRICAL CHARACTERISTIC; INTERFACIAL MICROSTRUCTURE; METAL STRUCTURES; OXIDIZING ATMOSPHERE; P-TYPE; SAMPLE SURFACE; SCHOTTKY BARRIER HEIGHTS; SPECIFIC CONTACT RESISTANCES; TEMPERATURE DEPENDENCE;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; GOLD ALLOYS; METAL ANALYSIS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANNEALING;

EID: 84855335975 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669407 Document Type: Article

Times cited : (60)

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