Investigations on Ni-Ti-Al ohmic contacts obtained on p-type 4H-SiC

Materials Science Forum

Volumn 711, Issue , 2012, Pages 169-173

  Laariedh, F ^a   Lazar, M ^a   Cremillieu, P ^b   Leclercq, J L ^b   Planson, D ^a  

^a Univ Claude Bernard Lyon1   (France)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

EDX; Nickel; Ohmic contact resistance; Silicon Carbide; SIMS; TLM

Indexed keywords

ALUMINUM ALLOYS; CONTACT RESISTANCE; ELECTRIC CONTACTORS; ENERGY DISPERSIVE SPECTROSCOPY; NICKEL; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICES; SILICON CARBIDE; TERNARY ALLOYS; WIDE BAND GAP SEMICONDUCTORS;

CURRENT/VOLTAGE MEASUREMENTS; ELECTRON BEAM DEPOSITIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; LIFT-OFF PROCEDURES; PROFILE EVOLUTION; REPRODUCIBILITIES; SPECIFIC CONTACT RESISTANCES; TRANSFER LENGTH METHODS;

TITANIUM ALLOYS;

EID: 84856976603     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.711.169     Document Type: Conference Paper

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