Improved AlNi ohmic contacts to P-type SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 841-844

  Tsao, B H ^a   Liu, S ^a   Scofield, J ^b  

^a UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

4H SiC; Contact Resistivity; Ohmic Contact; TLM (Transmission Line Method)

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRON TRANSPORT PROPERTIES; GRAPHITE; ION IMPLANTATION; METALLIZING; MORPHOLOGY; NITROGEN COMPOUNDS; OHMIC CONTACTS; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

4H-SIC; CONTACT RESISTIVITY; HIGH DENSITY GRAPHITE; TRAMISSION LINE METHOD (TLM);

ALUMINUM ALLOYS;

EID: 8644235874     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.841     Document Type: Conference Paper

References (4)

1. R.F. Davis et al: Materials Science and Engineering, B Vol. 1(1988), p. 77.
2. th Int'l High Temp. Elect. Conf., CD-ROM, (2002).
3. S.E. Mahoney, B.A. Hull, J.Y. Lin, and J. Crofton: Solid State Electronics, Vol. 46 (2002), p. 689.
4. J. Crofton, L.Beyer, J.Williams, E.Luckowski, S.Mahoney, and J.DeLucca, Solid State Electronics, Vol. 41, No 11 (1997), p. 1725.