Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally off HEMT

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 430-432

  Chen, Wanjun ^a,b   Wong, King Yuen ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

AlGaN GaN; Boost converter; Field effect rectifier (FER); Fluorine plasma ion implantation; Normally off HEMT; Switch mode power supply

Indexed keywords

ALGAN/GAN; BOOST CONVERTER; FIELD-EFFECT RECTIFIER (FER); FLUORINE PLASMA ION IMPLANTATION; NORMALLY-OFF HEMT; SWITCH-MODE POWER SUPPLY;

DC-DC CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRIC CONVERTERS; ELECTRIC POWER DISTRIBUTION; ELECTRIC POWER TRANSMISSION NETWORKS; ELECTRIC POWER UTILIZATION; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ION BOMBARDMENT; ION IMPLANTATION; IONIZATION OF GASES; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

ELECTRIC RECTIFIERS;

EID: 67349090180     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2015897     Document Type: Article

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