AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(1 1 1)

Journal of Crystal Growth

Volumn 310, Issue 20, 2008, Pages 4417-4423

  Cordier, Yvon ^a   Portail, Marc ^a   Chenot, Sébastien ^a   Tottereau, Olivier ^a   Zielinski, Marcin ^b   Chassagne, Thierry ^b  

^a CRHEA CNRS   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

A3. Chemical vapor deposition; A3. Molecular beam epitaxy; B1. Nitrides; B1. Silicon carbide; B3. High electron mobility transistors

Indexed keywords

AMMONIA; CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; NONMETALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THERMAL EXPANSION; THERMAL SPRAYING; TRANSISTORS;

A3. CHEMICAL VAPOR DEPOSITION; A3. MOLECULAR BEAM EPITAXY; ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; B1. NITRIDES; B1. SILICON CARBIDE; B3. HIGH ELECTRON MOBILITY TRANSISTORS; CHEMICAL VAPORS; CRACK-FREE GAN LAYERS; EXPANSION COEFFICIENTS; GALLIUM NITRIDE (GAN); GAN FILMS; SILICON SUBSTRATES; THREADING DISLOCATION DENSITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 52349095680     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.063     Document Type: Article

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