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Volumn 131-133, Issue , 2008, Pages 491-496
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Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy
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Author keywords
GaN; Mg implantation; Scanning capacitance microscopy; Si implantation
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Indexed keywords
ACTIVATION ENERGY;
CARRIER CONCENTRATION;
EPITAXIAL GROWTH;
RAPID THERMAL ANNEALING;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
ANNEALING;
CAPACITANCE;
CHEMICAL ACTIVATION;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
IONS;
MAGNESIUM;
QUANTUM THEORY;
SCANNING;
SEMICONDUCTOR DEVICE MANUFACTURE;
WIDE BAND GAP SEMICONDUCTORS;
CARRIER COMPENSATION;
ELECTRICAL ACTIVATION;
HETEROEPITAXIAL FILMS;
SCANNING CAPACITANCE MICROSCOPY;
ANNEALING PROCESS;
ANNEALING TEMPERATURES;
ION IMPLANTED SI;
SI IMPLANTATION;
TEMPERATURE RANGE;
GALLIUM NITRIDE;
SILICON;
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EID: 38549119409
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Conference Paper |
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Times cited : (10)
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References (7)
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