Role of interface layers and localized states in TiAl-based Ohmic contacts to p-type 4H-SiC

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 277-284

  Gao, M ^a,c   Tsukimoto, S ^b   Goss, S H ^a   Tumakha, S P ^a   Onishi, T ^b   Murakami, M ^b   Brillson, L J ^a  

^a The Ohio State University   (United States)

^b KYOTO UNIVERSITY   (Japan)

^c PEKING UNIVERSITY   (China)

Author keywords

Interface; Localized states; Ohmic contact; p type 4H SiC; Ti 3SiC 2; Work function

Indexed keywords

BARRIER HEIGHT; LOCALIZED STATES; P-TYPE 4H-SIC;

INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TITANIUM COMPOUNDS; WORK FUNCTION;

OHMIC CONTACTS;

EID: 34249041630     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0078-0     Document Type: Conference Paper

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