Finding the optimum Al-Ti alloy composition for use as an ohmic contact to p-type SiC

Solid-State Electronics

Volumn 46, Issue 1, 2002, Pages 109-113

  Crofton, J ^a,b   Mohney, S E ^c   Williams, J R ^d   Isaacs Smith, T ^d  

^a MURRAY STATE UNIVERSITY   (United States)

^b UNIVERSITY OF KENTUCKY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d AUBURN UNIVERSITY   (United States)

Author keywords

Aluminium titanium; Contact resistance; Ohmic contact; p type SiC

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; ELECTRIC RESISTANCE; PHASE DIAGRAMS; SILICON CARBIDE;

ALLOY COMPOSITION;

OHMIC CONTACTS;

EID: 0036132255     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00208-8     Document Type: Article

References (7)

1. Single crystal growth of 6H-SiC by a vacuum sublimation method, and blue LEDs
2. Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD
3. Contact resistance measurements on P-type 6H-SiC
4. Titanium and aluminum-titanium ohmic contacts to P-type SiC
5. The physics of ohmic contacts. A review of fundamental questions and applications of SiC to current device technology
6. Al-Ti P-type ohmic contacts to SiC