Ohmic contacts to P-type epitaxial and implanted 4H-SiC

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 895-898

  Crofton, J ^a,b   Williams, J R ^c   Adedeji, A V ^c   Scofield, J D ^d   Dhar, S ^e   Feldman, L C ^e   Bozack, M J ^c  

^a MURRAY STATE UNIVERSITY   (United States)

^b UNIVERSITY OF KENTUCKY   (United States)

^c AUBURN UNIVERSITY   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e VANDERBILT UNIVERSITY   (United States)

Author keywords

Contact resistance; Implanted material; Ohmic contacts

Indexed keywords

CONTACT RESISTANCE; DOPING (ADDITIVES); EPITAXIAL LAYERS; ION IMPLANTATION; SILICON CARBIDE; TEMPERATURE MEASUREMENT;

DOPING CONCENTRATION; ELEVATED TEMPERATURE MEASUREMENTS; IMPLANTED MATERIALS; ROOM TEMPERATURE;

OHMIC CONTACTS;

EID: 37849036794     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.895     Document Type: Conference Paper

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