Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5616-5620

  Johnson, Brian J ^a   Capano, Michael A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAPS; ELECTRON AFFINITIES; THERMAL ANNEALING; WORK FUNCTION (WF);

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; ELECTRIC FIELDS; INTERFACES (MATERIALS); OHMIC CONTACTS; SEMICONDUCTOR MATERIALS; SILICA; SPUTTER DEPOSITION; TITANIUM;

ALUMINUM;

EID: 2942585378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1707215     Document Type: Article

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