Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Suski, T ^a   Litwin Staszewska, E ^a   Piotrzkowski, R ^a   Czernecki, R ^b   Krysko, M ^a   Grzanka, S ^b   Nowak, G ^a   Franssen, G ^a   Dmowski, L H ^a   Leszczynski, M ^a,b   Perlin, P ^a,b   Lucznik B ^a   Grzegory, I ^a,b   Jakiela R ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BIOACTIVITY; CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; GALLIUM NITRIDE; HOLE CONCENTRATION; MAGNESIUM PRINTING PLATES; MASS SPECTROMETRY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

COMPENSATION RATES; DONOR DENSITIES; ELECTRICAL TRANSPORTS; GAN LAYERS; GAN SUBSTRATES; METAL ORGANIC; MG DOPED; MISORIENTATION ANGLES; SECONDARY ION MASS SPECTROSCOPIES; SUBSTRATE MISORIENTATION; TEMPERATURE DEPENDENCES;

GALLIUM ALLOYS;

EID: 55149094125     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013352     Document Type: Article

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