Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 370-373

  Vassilevski, K ^a,b   Zekentes, K ^a   Tsagaraki, K ^a   Constantinidis, G ^a   Nikitina, I ^b  

^a INSTITUTE OF COMPUTER SCIENCE   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Aluminum; Cermet; Ohmic contacts; Silicon carbide; Thermionic emission

Indexed keywords

ALUMINUM ALLOYS; CERMETS; EPITAXIAL GROWTH; MULTILAYERS; OHMIC CONTACTS; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

THERMIONIC EMISSION;

SILICON CARBIDE;

EID: 0035932328     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00597-3     Document Type: Article

References (9)

1. Aqueous cleaning processes