Ohmic contacts to SiC

International Journal of High Speed Electronics and Systems

Volumn 15, Issue 4, 2005, Pages 781-820

  Roccaforte, Fabrizio ^a   La Via, Francesco ^a   Raineri, Vito ^a  

^a CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC RESISTANCE; MOS CAPACITORS; NICKEL; RECTIFYING CIRCUITS; SILICON CARBIDE;

CONTACT RESISTANCE; DEPOSITION ANNEALING; RECTIFYING CONTACTS; RESISTANCE MEASUREMENT;

OHMIC CONTACTS;

EID: 33747120656     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156405003429     Document Type: Article

References (109)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., John Wiley & Sons, New York, 1981.
2. G.L. Harris, G. Kelner, M. Shur, Ohmic contacts to SiC, in Properties of Silicon Carbide, G.L. Harris ed., EMIS Datareviews Series n° 13, INSPEC Publication, London, 1995.
3. C.E. Weitzel, J.W. Palmour, C.H. Carter, K. Moore, K.J. Nordquist, S. Allen, C. Thero, Silicon carbide high-power devices, IEEE Trans. Electron Devices 43, 1732-1741 (1996).
4. K. Rottner, M. Frischholz, T. Myrtveit, D. Mou, K. Nordgren, A. Henry, C. Hallin, U. Gustafsson, A. Schöner, SiC power devices for high voltage applications, Mat. Sci. Eng. B 61-61, 330-338 (1999).
5. R.C. Clarke, J.W. Palmour, SiC microwave power technology, Procedeeings of the IEEE 90, 987-992 (2002).
6. J.A. Cooper, M.R. Melloch, J.M. Woodall, J. Spitz, K.J. Schoen, J.P. Henning, Recent advances in SiC power devices, Mat. Sci. Forum 264-268, 895-900 (1998).
7. S. Tanimoto, H. Okushi, K. Arai, Ohmic contacts for power devices on SiC, in Silicon Carbide: Recent Major Advances, W.J. Choyke, H. Matsunami, G. Pensl eds., Springer Verlag, Berlin-Heidelberg, 2004.
8. R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama, M. Murakami, Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC, Mat. Sci. Eng. B 98, 286-293 (2003).
9. L.M. Porter, R. F. Davis, A critical review of ohmic and rectifying contacts for silicon carbide, Mat. Sci. Eng. B 34, 83-105 (1995).
10. M.J. Bozack, Surface studies on SiC as related to contacts, phys. Stat. Sol (b) 202, 549-580 (1997).
11. J. Crofton, L.M. Porter, J.R. Williams, The physics of Ohmic Contacts to SiC, phys. Stat. Sol. (b) 202, 581-603 (1997).
12. V. Saxena, A.J. Steckl, Building blocks for SiC devices: ohmic contacts, Schottky contacts, and p-n junctions, in SiC Materials and Devices, Y.S. Park ed., Academic Press, San Diego, 1998.
13. M.W. Cole, R.C. Joshi, Ohmic Contacts to SiC for High Power and High Temperature Device Applications, in Silicon Carbide: Materials, Processing and Devices, Z.C. Fen and J.H. Zhao eds., Taylor & Francis, 2003.
14. J. Crofton, P.G. McMullin, J.R. Williams, M.J. Bozack, High-temperature ohmic contact to n-type 6H-SiC using nickel, Appl. Phys. Lett. 77, 1317-1319 (1995).
15. J. Crofton, L. Beyer, J.R. Williams, E.D. Luckowski, S.E. Mohney, J. M. Delucca, Titanium and Aluminum-Titanium ohmic contacts to p-type SiC, Solid-State Electronics 41, 1725-1729 (1997).
16. B.J. Johnson, M.A. Capano, Mechanism of ohmic behavior of Al/Ti contacts to p-type 4H-SiC after annealing, J. Appl. Phys. 95, 5616-5620 (2004).
17. Ts. Marinova, A. Kakanakova-Gerogieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pécz, G. Radnoczi, Gy. Vincze, Nickel based ohmic contacts on SiC, Mat. Sci. Eng. B 46, 223-226 (1997).
18. F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, Improvement of high temperature stability of nickel contacts on n-type 6H-SiC, Appl. Surf. Sci. 184, 295-298 (2001).
19. 2/Pt ohmic contacts on SiC after 1000 h at 600°C, J. Appl. Phys. 91, 6553-6559 (2002).
20. N. Kiritani, M. Hoshi, S. Tanimoto, K. Adachi, S. Nishizawa, T. Yatsuo, H. Okushi, K. Arai, Single material ohmic contacts simultaneously formed on the source/p-well/gate of 4H-SiC vertical MOSFETs, Mat. Sci. Forum 433-436, 669-672 (2003).
21. S. Tanimoto, M. Inada, N. Kiritani, M. Hoshi, H. Okushi, K. Arai, Single contact-material MESFETs on 4H-SiC, Mat. Sci. Forum 457-460, 1221-1224 (2004).
22. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor contacts, Oxford Science Publications, Oxford, 1988.
23. D. K. Schroder, Semiconductor material and device characterization, John Wiley and Sons, New York, 1998
24. P.A. Padovani, R. Stratton, Field and thermoionic-field emission in Schottky barriers, Solid-State Electron. 9, 695-707 (1966).
25. A.Y.C. Yu, Electron tunneling and contact resistance of metal-silicon contact barriers, Solid-State Electron. 13, 239-257 (1970).
26. H.H. Berger, Contact resistance and contact resistivity, J. Electrochem. Soc. 119, 507-514 (1972).
27. H.H. Berger, Model for contacts to planar devices, Solid-State Electron. 15, 145-158 (1972).
28. G.K. Reeves, H.B. Harrison, Obtaining the specific contact resistance from transmission line model measurements, IEEE Electron Device Lett. 3, 111-113 (1982).
29. M. Finetti M, A. Scorzoni, G. Soncini, Lateral current crowding effects on contact resistance: Measurements in four terminal resistor test patterns, IEEE Electron Device Lett. 5, 524-526 (1984).
30. O.K. Reeves, Specific contact resistance using a circular transmission line model, Solid-State Electron. 23, 487-490 (1980).
31. A.J. Willis, A.P. Botha, Investigation of ring structures for metal-semiconductor contact resistance determination, Thin Solid Films 146, 15-20 (1987).
32. S.J. Proctor, L.W. Linholm, A direct measurement of interfacial contact resistance, IEEE Electron Device Lett. 3, 294-296 (1982).
33. H. Na, H. Kim, K. Adachi, N. Kiritani, S. Tanimoto, H. Okushi, K. Arai, High-quality Schottky and ohmic contacts in planar 4H-SiC semiconductor field-effect transistors and device performance, J. Electron. Mater. 33, 89-93 (2004).
34. N.I. Cho, K.H. Jung, Y. Choi, Improved ohmic contact to the n-type 4H-SiC semiconductor using cobalt silicides, Semicond. Sci. Technol. 19, 306-310 (2004).
35. T.N. Oder, J.R. Williams, K.W. Bryant, M.J. Bozack, J. Crofton, Low resistance ohmic contacts to n-SiC using Niobium, Mat. Sci. Forum 338-342, 997-1000 (2000).
36. R.H. Cox, H. Strack, Ohmic contacts for GaAs devices, Solid-State Electron. 10, 1213-1218 (1967).
37. 2) ohmic contacts to 6H silicon carbide fabricated using cubic silicon carbide contact layer, Appl. Phys. Lett. 64, 318-320 (1994).
38. S.Y. Han, K.H. Kim, J.K. Kim, H.W. Jang, K.H. Lee, N.K. Kim, E.D. Kim, J.L. Lee, Ohmic contact formation mechanism of Ni on n-type 4H-SiC, Appl. Phys. Lett. 79, 1816-1818 (2001).
39. S. Tanimoto, N. Kiritani, M. Hoshi, H. Okushi, Ohmic contact structure and fabrication process applicable to practical SiC devices, Mat. Sci. Forum 389-393, 879-884 (2002).
40. T. Uemoto, Reduction of Ohmic contact resistance on n-type 6H-SiC by heavy doping, Jpn. J. Appl. Phys. Part 2 34, L7-L9 (1995).
41. E.D. Luckowski, J.M. Delucca, J.R. Williams, S.E. Mohney, M.J. Bozack, T. Isaac-Smith, J. Crofton, Improved ohmic contact to n-type 4H and 6H-SiC using nichrome, J. Electron. Mater. 27, 330-334 (1998).
42. 2 ohmic contact to n-type 4H-SiC, Mat. Sci. Forum 389-393, 889-892 (2002).
43. C. Deeb, A.H. Heuer, A low-temperature route to thermodynamically stable ohmic contacts to n-type 6H-SJC, Appl. Phys. Lett. 84, 1117-1119 (2004).
44. T. Jang, L.M. Porter, G.W.M. Rutsch, B. Odekirk, Tantalum carbide ohmic contacts to n-type silicon carbide, Appl. Phys. Lett. 75, 3956-3958 (1999).
45. T. Jang, B. Odekirk, L.D. Madsen, L.M. Porter, Thermal stability and contact degradation mechanisms of TaC ohmic contacts with W/WC overlayers on n-type 6H-SiC, J. Appl. Phys. 90, 4555-4559 (2001).
46. F. La Via, F. Roccaforte, A. Makhtari, V. Raineri, P. Musumeci, L. Calcagno, Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide, Microelectronics Engineering 60, 269-282 (2002).
47. S.K. Lee, C.M. Zetterling, M. Östling, J.P. Palmquist, H. Högberg, U. Jansson, Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide, Solid-State Electron. 44, 1179-1186 (2000).
48. -5) TiC Ohmic contacts to n-type 6Hα-SiC, Appl. Phys. Lett. 66, 760-762 (1995).
49. U. Schmid, R. Getto, S.T. Sheppard, W. Wondrak, Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC with titanium suicide ohmic contacts, J. Appl. Phys. 85, 2681-2686 (1999).
50. R. Getto, J. Freytag, M. Kopnarski, H. Oechsner, Characterization of sputtered titanium suicide ohmic contacts on n-type 6H-silicon carbide, Mat. Sci. Eng. B 61-62, 270-274 (1999).
51. J.R. Waldrop, R.W. Grant, Y.C. Wang, R.F. Davis, Metal Schottky barrier contacts to alpha SiC, J. Appl. Phys. 72, 4757-4760 (1992).
52. J. Waldrop, Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal phase dependence, Appl. Phys. Lett. 62, 2685-2687 (1993).
53. F. Goesmann, R. Schmid-Fetzer, Temperature-dependent interface reactions and electrical contact properties of titanium on 6H-SiC, Semicond. Sci. Technol. 10, 1652-1658 (1995).
54. S. Gorsse, Y. Le Petitcorps, A new approach in the understanding of the SiC/Ti reaction zone composition and morphology, Composites Part A 29A, 1221-1227 (1998).
55. L.M. Porter, R.F. Davis, J.S. Bow, M.J. Kim, R.W. Carpenter, R.C. Glass, Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001), J. Mater. Res. 10, 668-679 (1995).
56. T. Teraji, S. Hara, H. Okushi, K. Kajimura, Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height, Appl. Phys. Lett. 71, 689-691 (1997).
57. A. Makhtari, F. La Via, V. Raineri, L. Calcagno, F. Frisina, Structural characterization of titanium silicon carbide reaction, Microelectronics Engineering 55, 375-381 (2001).
58. J. S. Chen, E. Kolawa, M.A. Nicolet, R. P. Ruiz, L. Baud, Jaussaud, R. Madar, Reaction of Ta thin film with single crystalline (001) β-SiC", J. Appl. Phys. 76, 2169-2175 (1994).
59. F. Roccaforte, F. La Via, V. Raineri, L. Calcagno, P. Musumeci, G.G. Condorelli, Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height, Appl. Phys. A 77, 827-833 (2003).
60. F. Roccaforte, F. La Via, V. Raineri, F. Mangano, L. Calcagno, Temperature dependence of the c-axis mobility in 6H-SiC Schottky diodes, Appl. Phys. Lett. 83, 4181-4183 (2003).
61. M. Treu, R. Rupp, H. Kapels, W. Bartsch, Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC, Mat. Sci. Forum 353-356, 679-682 (2001).
62. B.J. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C.E. Weitzel, T. Gehoski, D. Ganser, Electrical characteristics of Schottky barriers on 4H-SiC: the effects of barrier height nonuniformity, J. Electron. Mat. 29, 376-383 (2000).
63. V. Saxena, J.N. Su, A.J. Steckl, High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal filed plate termination, IEEE Trans. on Electron Devices 46, 456-464 (1999).
64. S.P. Muraka, Self-aligned silicides or metals for very large scale integrated circuit applications, J. Vac. Sci. Technol. B 4, 1325-1331 (1986).
65. C.S. Pai, C.M. Hanson, S.S. Lau, X-ray diffraction and ion backscattering study of thermally annealed Pd/SiC and Ni/SiC, J. Appl. Phys. 75, 618-619 (1985).
66. F. Roccaforte, F. La Via, A. Baeri, V. Raineri, L. Calcagno, F. Mangano, Structural and electrical properties of Ni/Ti Schottky contacts on silicon carbide upon thermal annealing, J. Appl. Phys. 96, 4313-4318 (2004).
67. I. Ohdomari, S. Sha, H. Aochi, T. Chikyow, S. Suzuki, Investigation of thin Ni/single-crystal SiC interface reaction, J. Appl. Phys. 62, 3747-3750 (1987).
68. H. Höchst, D.W. Niles, G.W. Zajac, T.H. Fleisch, B.C. Johnson, J.M. Meese, Electronic structure and thermal stability of Ni/SiC(100) interfaces, J. Vac. Sci. Technol. B 6, 1320-1325 (1988).
69. 10 alloy thin film with 6H-SiC single crystal, J. Appl. Phys. 80, 167-173 (1996).
70. W.F. Slijkerman, A.E.M.J. Fischer, J.F. van der Veen, I. Ohdomari, S. Yoshida, S. Misawa, Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering, J. Appl. Phys. 66, 666-673 (1989).
71. M. Nathan, J.S. Ahearn, On the nanometer-scale solid-state reactions at thin-film Ni/amorphous SiC and Co/amorphous SiC interfaces, J. Appl. Phys. 70, 811-820 (1991).
72. A.S. Edelstein, D.J. Gillespie, S.F. Cheng, J.H. Perepezko, K. Landry, Reactions at amorphous SiC/Ni interfaces, J. Appl. Phys. 85, 2636-2641 (1999).
73. R.F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscope, second edition, Plenum Press, New York, 1996.
74. F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini, A. Cavallini, Schottky-ohmic transition in nickel suicide /SiC-4H system: is it really a solved problem?, Microelectronic Engineering 70, 519-523 (2003).
75. S.Y. Han, J.L. Lee, Effect of Interfacial Reactions on Electrical Properties of Ni Contacts on Lightly Doped n-Type 4H-SiC, J. Electrochem. Soc. 149, G189-G193 (2002).
76. L. Calcagno, E. Zanetti, F. La Via, F. Roccaforte, V. Raineri, S. Libertino, F.Giannazzo, M. Mauceri, P.Musumeci, Schottky-Ohmic transition in nickel silicide/SiC system: is it really a solved problem?, Mat. Sci. Forum 433-436, 721-724 (2003).
77. F. Roccaforte, F. La Via, V. Raineri, P. Musmeci, L. Calcagno, Electrical characterization of nickel suicide contacts on silicon carbide, Mat. Sci. Forum 389-393, 893-896 (2001).
78. F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, Schottky-Ohmic transition in nickel silicide/SiC-4H system: the effect of non uniform Schottky barrier, Mat. Sci. Forum 457-460, 861-864 (2004).
79. R.T. Tung, Recent advances in Schottky barrier concepts, Mat. Sci. Eng. R 35, 1-138 (2001).
80. F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, E. Zanoni, Richardson's constant in inhomogeneous silicon carbide Schottky contacts, J. Appl. Phys. 93, 9137-9144 (2003).
81. F. Roccaforte, L. Calcagno, P. Musumeci, F. La Via, Ion-irradiation effect on the Ni/SiC interface reaction, Mat. Sci. Forum 353-356, 255-258 (2001).
82. 2 to n-type SiC, Solid-State Electron. 46, 2063-2067 (2002).
83. B.J. Johnson, M.A. Capano, The effect of titanium on Al-Ti contacts to p-type 4H-SiC, Solid-State Electron. 47, 1437-1441 (2003).
84. 2 formed in Al/Ti contacts to p-type SiC, Appl. Surf. Sci. 206, 8-11 (2003).
85. K. Vassilevski, K. Zekentes, K. Tsagaraki, G. Constantinidis, I. Nikitina, Phase formation at rapid thermal annealing of Al:Ti:Ni ohmic contacts on 4H-SiC, Mat. Sci. Eng. B 80, 370-373 (2001).
86. R. Kakanakov, L. Kassamakova, I. Kassamakov, K. Zekentes, N. Kuznetsov, Improved Ai/Si ohmic contacts to p-type 4H-SiC, Mat. Sci. Eng. B 80, 374-377 (2001).
87. J. Crofton, S.E. Mohney, J.R. Williams, T. Isaacs-Smith, Finding the optimal Al-Ti alloy composition for use as an ohmic contact to p-type SiC, Solid-State Electron. 46, 109-113 (2002).
88. J. Crofton, P.A. Barnes, J.R. Williams, J.A. Edmond, Contact resistance measurements on p-type 6H-SiC, Appl. Phys. Lett. 62, 384-386 (1993).
89. F. Moscatelli, A. Scorzoni, A. Poggi, G.C. Cardinali, R. Nipoti, Improved electrical characterization of Al-Ti ohmic contacts on p-type ion implanted 6H-SiC, Semicond. Sci. Technol. 18, 554-559 (2003).
90. N. Lundberg, M. Östling, Thermally stable low ohmic contacts to p-type 6H-SiC using cobalt suicides, Solid-State Electron. 39, 1559-1565 (1996).
91. O. Nakatsuka, Y. Koide, M. Murakami, CoAl ohmic contact material with improved surface morphology for p-type 4H-SiC, Mat. Sci. Forum 389-393, 885-888 (2002).
92. T. Sakai, K. Nitta, S. Tsukimoto, M. Moriyama, and Masanori Murakami, Ternary TiAlGe ohmic contacts for p-type 4H-SiC, J. Appl. Phys. 95, 2187-2189 (2004).
93. L. Kassamakova, R. Kakanakov, N. Nordell, S. Savage, Thermostable ohmic contacts to p-type SiC, Mat. Sci. Forum 264-268, 787-790 (1998).
94. N.A. Papanicolau, A. Edwards, M.V. Rao, W.T. Anderson, Si/Pt Ohmic contacts to p-type 4H-SiC, Appl. Phys. Lett. 73, 2009-2011 (1998).
95. J.O. Olowolafe, J. Liu, R.B. Gregory, Effects of Si and Al interface layers on the properties of Ta and Mo contacts to p-type SiC, J. Electron. Mater. 29, 391-397 (2000).
96. K.H. Jung, N.I. Cho, J.H. Lee, S.J. Yang, C.K. Kim, B.T. Lee, K.H. Rim, N.K. Kim, E.D. Kim, Titanium-based ohmic contact on p-type 4H-SiC, Mat. Sci. Forum 389-393, 913-916 (2002).
97. S.K. Lee, C.M. Zetterling, E. Danielsson, M. Östling, J.P. Palmquist, H. Högberg, U. Jansson, Electrical characterization of TiC contacts to aluminum implanted 4H-silicon carbide, Appl. Phys. Lett. 77, 1478-1480 (2000).
98. A.A. Iliadis, S.N. Andronescu, K. Edinger, J.H. Orloff, R.D. Vispute, V. Talyansky, R.P. Sharma, T. Venkatesan, M.C. Wood, K.A. Jones, Ohmic contacts to p-type 6H-SiC using focused ion-beam surface modification and pulsed laser epitaxial TiN deposition, Appl. Phys. Lett. 73, 3545-3547 (1998).
99. J.R. Waldrop, Schottky barrier height of metal contacts to p-type alpha 6H-SiC, J. Appl. Phys. 75, 4548-4550 (1994).
100. A. Suzuki, Y. Fujii, H. Saito, Y. Tajima, K. Furukawa, S. Nakajima, Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD, J. Crystal Growth 115, 623-627 (1991).
101. A. Scorzoni, F. Moscatelli, A. Poggi, G.C. Cardinali, R. Nipoti, Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC, Mat. Sci. Forum 457-460, 881-884 (2004).
102. S.E. Mohney, B.A. Bull, J.Y. Lin, J. Crofton, Morphological study of the Al-Ti ohmic contact to p-type SiC, Solid-State Electron. 46, 689-693 (2002).
103. A. Parisini, A. Poggi, R. Nipoti, Structural characterization of Al/Ti and Ti contacts on SiC, Mat. Sci. Forum 457-460, 837-840 (2004).
104. Y. Luo, F. Yan, K. Tone, J.H. Zao, J. Crofton, Searching for device processing compatible ohmic contacts to implanted p-type 4H-SiC, Mat. Sci. Forum 338-342, 1013-1016 (2000).
105. K.V. Vassilevski, G. Costantinidis, N. Papanicolau, N. Martin, K. Zekentes, Study of annealing conditions on the formation of ohmic contacts on p+ 4H-SiC layers grown by CVD and LPE, Mat. Sci. Eng. B 61-62, 296-300 (1999).
106. J.H. Zhao, K. Tone, S.R. Weiner, M.A. Caleca, H. Du, S.P. Withrow, Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation, IEEE Electron Dev. Lett. 18, 375-377(1997).
107. 2SL/TiW/Au contact structure, J. Vac. Sci. Technol. B 22, 966-970 (2004).
108. A.Baeri, V.Raineri, F. Roccaforte, F.La Via, E. Zanetti, Study of TiW/Au thin films as metallization stack for high temperature and harsh environment devices on 6H Silicon Carbide, Mat. Sci. Forum 457-460, 873-876 (2004).
109. L.G. Fursin, J.H. Zhao, M. Weiner, Nickel ohmic contacts to p- and n-type 4H-SiC, Electronics Lett. 37, 1092-1093 (2001).