SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 8, 2004, Pages 4666-4667

Comment on "Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films" [J. Appl. Phys. 86, 4491 (1999)]

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT; CONTACT RESISTANCE; ENERGY BAND; ENERGY BARRIER;

ELECTRIC RESISTANCE; GALLIUM NITRIDE; HEAT TREATMENT; NICKEL COMPOUNDS; OXIDATION; VACUUM;

OHMIC CONTACTS;

EID: 7544240828 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1793357 Document Type: Review

Times cited : (8)

References (8)

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