A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

Microelectronic Engineering

Volumn 83, Issue 3, 2006, Pages 440-445

  Perez Tomas A ^a   Godignon, P ^a   Mestres, N ^b   Millan J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

4H SiC MOSFETs; Coulomb scattering; Field effect mobility; Interface traps; Mobility model

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); MOSFET DEVICES; SILICON CARBIDE;

4H-SIC MOSFETS; COULOMB SCATTERING; FIELD-EFFECT MOBILITY; INTERFACE TRAPS; MOBILITY MODEL; MOBILITY REDUCTION;

ELECTRON MOBILITY;

EID: 33244469263     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.11.007     Document Type: Article

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