Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials

Science and Technology of Advanced Materials

Volumn 7, Issue 6, 2006, Pages 496-501

  Ito, Kazuhiro ^a   Tsukimoto, Susumu ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC; Al ion implantation; Ohmic contacts; Specific contact resistance; Ti3SiC2

Indexed keywords

4H-SIC; AL ION IMPLANTATION; SPECIFIC CONTACT RESISTANCE; TI3SIC2;

ALUMINUM; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DOPING (ADDITIVES); INTERFACES (MATERIALS); OHMIC CONTACTS; SILICON CARBIDE; THERMIONIC EMISSION; TRANSMISSION ELECTRON MICROSCOPY;

ION IMPLANTATION;

EID: 33750037345     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2006.04.011     Document Type: Article

References (9)

1. Yu.A. Vodakov, E.N. Mokhov, in: R.C. Marshall, J.W. Faust Jr., C.E. Ryan (Eds.), Silicon Carbide 1973, University South Carolina Press, Columbia, 1974, p. 508.
2. Troffer T., Schadt M., Frank T., Ito H., Pensl G., et al. Phys. Stat. Sol. A 162 (1997) 277
3. Matsunami H., and Kimoto T. Trans. IEICE J-85-C (2002) 409
4. Tsao B.H., Liu S., and Scofield J. Mater. Sci. Forum 457-460 (2004) 841
5. Scorzoni A., Moscatelli F., Poggi A., Cardinali G.C., and Nipoti R. Mater. Sci. Forum 457-460 (2004) 881
6. Spiess L., Nennewitz O., Weishart H., Lindner J., Skorupa W., et al. Diamond Relat. Mater. 6 (1997) 1414
7. Lee S.K., Zetterling C.M., Ostling M., Palmquist J.P., and Jansson U. Microelectron. Eng. 60 (2002) 261
8. Tsukimoto S., Nitta K., Sakai T., Moriyama M., and Murakami M. J. Electron Mater. 33 (2004) 460
9. Yu A.Y.C. Solid-State Electron. 13 (1970) 239