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Volumn , Issue , 2007, Pages 161-163
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Effects of thermal annealing in ion-implanted gallium nitride
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALS;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GALLIUM NITRIDE;
INTERNET PROTOCOLS;
MAGNESIUM;
NITRIDES;
RAPID THERMAL ANNEALING;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR MATERIALS;
ACTIVE FRACTIONS;
ANNEALING TEMPERATURES;
CONVENTIONAL FURNACE ANNEALING;
DEVICE ISOLATIONS;
DOPING CONCENTRATIONS;
EDGE TERMINATIONS;
ELECTRICAL ACTIVATIONS;
FLUENCES;
GAN FILMS;
HIGH TEMPERATURES;
IMPLANTED REGIONS;
IMPLANTED SPECIES;
P-TYPE DOPING;
RAMP RATES;
RAPID ANNEALING;
THERMAL ANNEALING;
ANNEALING;
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EID: 47949114366
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/RTP.2007.4383837 Document Type: Conference Paper |
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Times cited : (3)
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References (6)
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