The physics and chemistry of the Schottky barrier height

Applied Physics Reviews

Volumn 1, Issue 1, 2014, Pages

  Tung, Raymond T ^a,b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICS;

CHEMICAL PRINCIPLES; COMPLEX PROBLEMS; METAL SEMICONDUCTORS; MS- INTERFACE; SCHOTTKY BARRIER HEIGHTS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84898477760     PISSN: None     EISSN: 19319401     Source Type: Journal    
DOI: 10.1063/1.4858400     Document Type: Article

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