Influence of annealing on current-voltage characteristics of H2SeO3 treated Al-nGaAs Schottky contact

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 2, 2000, Pages 499-505

  Meskinis, S ^a   Slapikas, K ^a   Grigaliunas, V ^a   Matukas, J ^b   Smetona, S ^c  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

^b VILNIUS UNIVERSITY   (Lithuania)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); METALLIZING; MORPHOLOGY; OHMIC CONTACTS; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

BARRIER HEIGHT REDUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034246654     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200008)180:2<499::AID-PSSA499>3.0.CO;2-M     Document Type: Article

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