Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Sinha, Mantavya ^a   Chor, Eng Fong ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM METALLOGRAPHY; ION BOMBARDMENT; ION IMPLANTATION; LIGHT METALS; NICKEL; NICKEL ALLOYS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR METAL BOUNDARIES; SILICON; TUNING;

(100) SILICON; (8 HYDROXY QUINOLINE) ALUMINUM; AMERICAN INSTITUTE OF PHYSICS (AIP); CONCENTRATION (COMPOSITION); NICKEL SILICIDE (NISI); P-CHANNEL; SCHOTTKY SOURCE/DRAIN; SCHOTTKY-BARRIER HEIGHT (SBH); SEGREGATION (BENEFICIATION); SILICIDATION;

SCHOTTKY BARRIER DIODES;

EID: 44849137437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2940596     Document Type: Article

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