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Volumn 12, Issue 1, 2008, Pages

Modified NiSi/Si Schottky barrier height by Nitrogen implantation

(7) Kalra, Pankaj a,b Vora, Nikhil a,c Majhi, Prashant a Hung, P Y a Tseng, Hsing Huang a Jammy, Rajarao a Liu, Tsu Jae King b

a SEMATECH (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; ELECTRIC CURRENTS; NICKEL ALLOYS; NICKEL COMPOUNDS; NITROGEN; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON;

AXIOTAXY; BARRIER LOWERING; HEIGHT REDUCTIONS; NICKEL SILICIDATION; NICKEL SILICIDES; NITROGEN IMPLANTATIONS; SCHOTTKY BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 56049089864 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3002394 Document Type: Article

Times cited : (9)

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